Invention Application
WO1985004759A1 METHOD OF TRANSFERRING IMPURITIES BETWEEN DIFFERENTLY DOPED SEMICONDUCTOR REGIONS
审中-公开
传输不同半导体区域之间的重要性的方法
- Patent Title: METHOD OF TRANSFERRING IMPURITIES BETWEEN DIFFERENTLY DOPED SEMICONDUCTOR REGIONS
- Patent Title (中): 传输不同半导体区域之间的重要性的方法
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Application No.: PCT/US1985000502Application Date: 1985-03-25
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Publication No.: WO1985004759A1Publication Date: 1985-10-24
- Inventor: AMERICAN TELEPHONE & TELEGRAPH COMPANY , OH, Kye, Hwan
- Applicant: AMERICAN TELEPHONE & TELEGRAPH COMPANY
- Assignee: AMERICAN TELEPHONE & TELEGRAPH COMPANY
- Current Assignee: AMERICAN TELEPHONE & TELEGRAPH COMPANY
- Priority: US597,924 19840409
- Main IPC: H01L21/22
- IPC: H01L21/22
Abstract:
In semiconductor devices of extremely small dimensions, the problem of shorting together of adjacent, differently doped regions (12, 14) by a contact layer deposited through a window (17) which, owing to the smallness of the region dimensions, unavoidably exposes a surface portion of the adjacent region (12) not intended to be contacted, is solved by the use of a transfer layer (18) deposited first in the window which, upon heating, transfers impurities from the region (14) intended to be contacted to the unintentionally exposed portion of the adjacent region (12). The transferred impurities convert the exposed portion of the adjacent region to the same conductivity type as the impurity source region (14), thereby preventing shorting together of the contacted region (14) with the remaining, unconverted portion of the adjacent region.
Information query
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