A fabrication process for bipolar transistors having arsenic emitters which include masking an epitaxial layer so as to provide windows for defining a collector contact region, a base region and an isolation region. Phosphorus ions are introduced into the epitaxial layer through the window defining the collector contact region; and boron ions are introduced into the epitaxial layer through the windows defining the base region and the isolation region. The epitaxial layer is also masked to provide a window defining an emitter region within the base region and windows for ohmic connections to the base region, the collector contact region and the isolation region. Arsenic ions are then introduced into the epitaxial layer through the window defining the emitter region; and electrical connections are provided to the emitter region, the base region, the collector region and the isolation region through the windows for ohmic connections.