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Invention Application
WO01011773A1 ELECTRONIC CIRCUIT FOR IMITATING A CAPACITOR WITH VARIABLE CAPACITANCE 审中-公开
用于制造具有可变电容的电容器的电子电路

  • Patent Title: ELECTRONIC CIRCUIT FOR IMITATING A CAPACITOR WITH VARIABLE CAPACITANCE
  • Patent Title (中): 用于制造具有可变电容的电容器的电子电路
  • Application No.: PCT/EP2000/007187
    Application Date: 2000-07-26
  • Publication No.: WO01011773A1
    Publication Date: 2001-02-15
  • Main IPC: H01L21/822
  • IPC: H01L21/822 ;  H01L27/04 ;  H03H11/48
ELECTRONIC CIRCUIT FOR IMITATING A CAPACITOR WITH VARIABLE CAPACITANCE
Abstract:
An electronic circuit for imitating a capacitor with a controllable capacitance comprises a chain (CHN) of at least two differential pairs (DF1-DF3), the tail of each differential pair (DF1-DF3) being connected to a reference terminal (GND) via a respective separate current source (I1-I3). Each differential pair comprises a first and a second input. All the first inputs of the differential pairs (DF1-DF3) are connected to a signal terminal (CPVR) of the electronic unit. All the second inputs of the differential pairs (DF1-DF3) are interconnected via means (SPMNS) for supplying separate DC voltages between the second inputs of the differential pairs (DF1-DF3). Between the signal terminal (CPVR) and the reference terminal (GND) a capacitance is formed which is the sum of the input capacitances of the differential pairs (DF1-DF3). The capacitance is determined by the amount of charge per unit of voltage which is delivered to the first inputs of the differential pairs (DF1-DF3). If the separate DC voltages between the second inputs of the differential pairs (DF1-DF3) increase, then said amount of charge will decrease and as a consequence the capacitance will decrease. Thus the capacitance can be varied in that said separate DC voltages are varied.
Abstract(Chinese):

用于模拟具有可控电容的电容器的电子电路包括至少两个差分对（DF1-DF3）的链（CHN），每个差分对（DF1-DF3）的尾部经由参考端（GND）经由 相应的单独的电流源（I1-I3）。 每个差分对包括第一和第二输入。 差分对（DF1-DF3）的所有第一个输入端连接到电子单元的信号端子（CPVR）。 差分对（DF1-DF3）的所有第二输入通过用于在差分对（DF1-DF3）的第二输入之间提供分开的直流电压的装置（SPMNS）互连。 在信号端子（CPVR）和参考端子（GND）之间形成电容，它是差分对（DF1-DF3）的输入电容之和。 电容由输送到差分对（DF1-DF3）的第一输入端的每单位电压的电荷量决定。 如果差分对（DF1-DF3）的第二输入之间的分开的直流电压增加，则所述电荷量将减小，结果电容将减小。 因此，可以改变电容，因为所述分开的直流电压是变化的。

IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
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