Invention Application
WO0186715A3 METHOD FOR SOLDERING A FIRST METAL LAYER, WHICH HAS A THICKNESS OF LESS THAN 5 DOLLAR G(M)M, TO A SECOND METAL LAYER, AND A CORRESPONDING SOLDERING DEVICE AND SEMICONDUCTOR CHIP ASSEMBLY DEVICE
审中-公开
方法用于焊接的第一金属层具有小于5 DOLLAR G（M）M与第二金属层，钎焊及半导体芯片安装装置具有厚度
- Patent Title: METHOD FOR SOLDERING A FIRST METAL LAYER, WHICH HAS A THICKNESS OF LESS THAN 5 DOLLAR G(M)M, TO A SECOND METAL LAYER, AND A CORRESPONDING SOLDERING DEVICE AND SEMICONDUCTOR CHIP ASSEMBLY DEVICE
- Patent Title (中): 方法用于焊接的第一金属层具有小于5 DOLLAR G（M）M与第二金属层，钎焊及半导体芯片安装装置具有厚度
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Application No.: PCT/DE0101651Application Date: 2001-05-03
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Publication No.: WO0186715A3Publication Date: 2002-09-06
- Inventor: HOUDEAU DETLEF , HUEBNER HOLGER , KRIPESH VAIDYANATHAN
- Applicant: INFINEON TECHNOLOGIES AG , HOUDEAU DETLEF , HUEBNER HOLGER , KRIPESH VAIDYANATHAN
- Assignee: INFINEON TECHNOLOGIES AG,HOUDEAU DETLEF,HUEBNER HOLGER,KRIPESH VAIDYANATHAN
- Current Assignee: INFINEON TECHNOLOGIES AG,HOUDEAU DETLEF,HUEBNER HOLGER,KRIPESH VAIDYANATHAN
- Priority: DE10021870 2000-05-05
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/60
Abstract:
According to the invention, the first metal layer (107) is soldered to the second metal layer (102) using a soldering material (104), whereby only a portion of the first metal layer (107) is transformed into one or more intermetallic phases (122) with the soldering material that is used.
Information query
IPC分类:
