A non-volatile, bistable magnetic tunnel junction cache memory (15) includes a cache tag array (16) and a cache data array (18). The cache tag array includes non-volatile magnetic memory tag cells (17) arranged in rows and columns. Each row of the tag array includes a word line and a digit line associated with each tag cell in the row. The cache data array includes non-volatile magnetic memory data cells (19) arranged in rows and columns. The rows of the data array correspond with the rows of the tag array and each row of the data array is magnetically associated with the word line and the digit line associated with each corresponding row of the tag array.