Invention Application
- Patent Title: 基板処理装置及び基板処理方法
- Patent Title (English): Substrate treating device and substrate treating method
- Patent Title (中): 基板处理装置和基板处理方法
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Application No.: PCT/JP2002/006297Application Date: 2002-06-24
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Publication No.: WO2003001579A1Publication Date: 2003-01-03
- Inventor: 石田 大
- Applicant: 東京エレクトロン株式会社 , 石田 大
- Applicant Address: 〒107-8481 東京都 港区 赤坂五丁目3番6号 Tokyo JP
- Assignee: 東京エレクトロン株式会社,石田 大
- Current Assignee: 東京エレクトロン株式会社,石田 大
- Current Assignee Address: 〒107-8481 東京都 港区 赤坂五丁目3番6号 Tokyo JP
- Agency: 大森 純一
- Priority: JP2001-191978 20010625
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A structure, in which a second treating unit group that performs, under vacuum or pressure, e.g., an electron beam or ultraviolet ray irradiation, a CVD or a cleaning treatment is provided integrally with a first treating unit group that forms an interlayer insulation film under a normal pressure, can shorten a treating time especially in a damascene process to decrease foot print per treating power. A treating time thus shortened can prevent an insulating film from absorbing moisture in the air that causes deterioration in film quality, and contribute to forming a quality insulation film even if a porous film, for example, is used as an insulation film.
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