Invention Application
- Patent Title: 低誘電率膜の成膜方法および成膜装置並びにその膜を用いた電子装置
- Patent Title (English): Method and apparatus for forming film having low dielectric constant, and electronic device using the film
- Patent Title (中): 用于形成具有低介电常数的膜的方法和装置，以及使用电影的电子装置
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Application No.: PCT/JP2002/006839Application Date: 2002-07-05
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Publication No.: WO2003005432A1Publication Date: 2003-01-16
- Inventor: 杉野 隆 , 楠原 昌樹 , 梅田 優
- Applicant: 株式会社渡邊商行 , 杉野 隆 , 楠原 昌樹 , 梅田 優
- Applicant Address: 〒103-0022 東京都 中央区 日本橋室町4丁目2番16号 Tokyo JP
- Assignee: 株式会社渡邊商行,杉野 隆,楠原 昌樹,梅田 優
- Current Assignee: 株式会社渡邊商行,杉野 隆,楠原 昌樹,梅田 優
- Current Assignee Address: 〒103-0022 東京都 中央区 日本橋室町４丁目２番１６号 Tokyo JP
- Agency: 福森 久夫
- Priority: JP2001-205471 20010705
- Main IPC: H01L21/314
- IPC: H01L21/314
Abstract:
A method for forming a film having a low dielectric constant, characterized in that it comprises the steps of generating a plasma in a chamber for forming a film, reacting a nitrogen atom with boron and carbon in the chamber to thereby form a boron−carbon−nitrogen film on a substrate, and then holding the formed film to have an elevated temperature of 250 to 550 ˚ C; and an apparatus for practicing the method. The method allows the formation of a boron−carbon−nitrogen film having an extremely low dielectric constant.
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