Invention Application
- Patent Title: SYSTEM AND METHOD OF SILICON CRYSTALLIZATION
- Patent Title (中): 硅晶体的系统和方法
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Application No.: PCT/KR2004000520Application Date: 2004-03-12
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Publication No.: WO2004086489A8Publication Date: 2006-01-19
- Inventor: LEE SU-GYEONG , KIM DONG-BYUM , KANG MYUNG-KOO , CHUNG UI-JIN , KIM HYUN-JAE
- Applicant: SAMSUNG ELECTRONICS CO LTD , LEE SU-GYEONG , KIM DONG-BYUM , KANG MYUNG-KOO , CHUNG UI-JIN , KIM HYUN-JAE
- Assignee: SAMSUNG ELECTRONICS CO LTD,LEE SU-GYEONG,KIM DONG-BYUM,KANG MYUNG-KOO,CHUNG UI-JIN,KIM HYUN-JAE
- Current Assignee: SAMSUNG ELECTRONICS CO LTD,LEE SU-GYEONG,KIM DONG-BYUM,KANG MYUNG-KOO,CHUNG UI-JIN,KIM HYUN-JAE
- Priority: KR20030015741 2003-03-13
- Main IPC: C30B29/06
- IPC: C30B29/06 ; B23K26/06 ; B23K26/067 ; H01L21/20 ; H01L21/268 ; H01L21/324
Abstract:
A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous silicon layer deposited on a substrate that is mounted on a plurality of stages to be polycrystallized.
Information query
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