Invention Application
WO2005034186A2 METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING ISOLATION REGIONS
审中-公开
用于形成具有隔离区域的半导体器件的方法
- Patent Title: METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING ISOLATION REGIONS
- Patent Title (中): 用于形成具有隔离区域的半导体器件的方法
-
Application No.: PCT/US2004/029381Application Date: 2004-09-10
-
Publication No.: WO2005034186A2Publication Date: 2005-04-14
- Inventor: ORLOWSKI, Marius, K. , BARR, Alexander, L.
- Applicant: FREESCALE SEMICONDUCTOR, INC. , ORLOWSKI, Marius, K. , BARR, Alexander, L.
- Applicant Address: 6501 William Cannon Drive West, Austin, TX 78735 US
- Assignee: FREESCALE SEMICONDUCTOR, INC.,ORLOWSKI, Marius, K.,BARR, Alexander, L.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.,ORLOWSKI, Marius, K.,BARR, Alexander, L.
- Current Assignee Address: 6501 William Cannon Drive West, Austin, TX 78735 US
- Agency: KING, Robert, L.
- Priority: US10/668,714 20030923
- Main IPC: H01L
- IPC: H01L
Abstract:
A method for forming a semiconductor device (10) having isolation structures decreases leakage current. A channel isolation structure (32, 30, 34) decreases leakage current through a channel structure. In addition, current electrode dielectric insulation structures (36) are formed under current electrode regions to prevent leakage between the current electrodes (40).
Information query
