Invention Application
WO2006023594A3 HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES
审中-公开
高应变玻璃/含玻璃陶瓷的半导体绝缘体结构
- Patent Title: HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES
- Patent Title (中): 高应变玻璃/含玻璃陶瓷的半导体绝缘体结构
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Application No.: PCT/US2005029314Application Date: 2005-08-17
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Publication No.: WO2006023594A3Publication Date: 2007-05-10
- Inventor: AITKEN BRUCE G , DEJNEKA MATTHEW J , GADKAREE KISHOR P , PINCKNEY LINDA R
- Applicant: CORNING INC , AITKEN BRUCE G , DEJNEKA MATTHEW J , GADKAREE KISHOR P , PINCKNEY LINDA R
- Assignee: CORNING INC,AITKEN BRUCE G,DEJNEKA MATTHEW J,GADKAREE KISHOR P,PINCKNEY LINDA R
- Current Assignee: CORNING INC,AITKEN BRUCE G,DEJNEKA MATTHEW J,GADKAREE KISHOR P,PINCKNEY LINDA R
- Priority: US60278104 2004-08-18
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L23/58
Abstract:
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers According to one embodiment of the invention, a semiconductor-on- insulator structure has a first layer including a semiconductor material (110), attached to a second layer including a glass or glass-ceramic (120), with the strain point of the glass or glass-ceramic equal to or greater than about 8000C.
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