Invention Application
- Patent Title: HIGH CONDUCTANCE CRYOPUMP FOR TYPE III GAS PUMPING
- Patent Title (中): 用于III型气体泵送的高强度CRYOPUMP
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Application No.: PCT/US2005/024715Application Date: 2005-07-11
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Publication No.: WO2006036257A1Publication Date: 2006-04-06
- Inventor: BARTLETT, Allen, J. , NORDBORG, John , THOMPSON, Brian
- Applicant: HELIX TECHNOLOGY CORPORATION , BARTLETT, Allen, J. , NORDBORG, John , THOMPSON, Brian
- Applicant Address: Mansfield Corporate Center, Nine Hampshire Street, Mansfield, MA 02048-9171 US
- Assignee: HELIX TECHNOLOGY CORPORATION,BARTLETT, Allen, J.,NORDBORG, John,THOMPSON, Brian
- Current Assignee: HELIX TECHNOLOGY CORPORATION,BARTLETT, Allen, J.,NORDBORG, John,THOMPSON, Brian
- Current Assignee Address: Mansfield Corporate Center, Nine Hampshire Street, Mansfield, MA 02048-9171 US
- Agency: SMITH, James, M. et al.
- Priority: US10/948,955 20040924
- Main IPC: F04B37/08
- IPC: F04B37/08
Abstract:
A cryopump provides for high pumping speed of Type III gases. An open configuration of a frontal array provides high conductance of gases into a radiation shield which is shaped to focus gases toward a second stage array. The second stage array has an open configuration of baffles coated with adsorbent. Substantially all of the adsorbent has a direct line of sight to the radiation shield or to the opening in the radiation shield, and substantially all of the baffles are coated with adsorbent. In one form, the second stage cryopump array comprises an array of discs fanned to define a generally ball shaped envelope.
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