A method of forming an electronic device (100) includes etching a portion of a first gate dielectric layer (104) to reduce a thickness of the gate dielectric layer (304) within that portion. In one embodiment, portions not being etched may be covered by mask (206). In another embodiment, different portions may be etched during different times to give different thicknesses for the first gate dielectric layer. In a particular embodiment, a second gate dielectric layer (402) may be formed over the first gate dielectric layer (104, 504, 304) after etching the portion. The second gate dielectric layer (402) can have a dielectric constant greater than the dielectric constant of the first gate dielectric layer (104, 504. 304). Subsequent gate electrode (606) and source/drain region formation can be performed to form a transistor structure (20, 22, 24).