Invention Application
WO2006113093A3 WORD LINE SEGMENT SELECT TRANSISTOR ON WORD LINE CURRENT SOURCE SIDE
审中-公开
WORD LINE SEGMENT选择晶体管在字线电流源侧
- Patent Title: WORD LINE SEGMENT SELECT TRANSISTOR ON WORD LINE CURRENT SOURCE SIDE
- Patent Title (中): WORD LINE SEGMENT选择晶体管在字线电流源侧
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Application No.: PCT/US2006011963Application Date: 2006-03-30
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Publication No.: WO2006113093A3Publication Date: 2007-01-11
- Inventor: WANG PO-KANG , RONG YIN , YANG HSU KAI , SHI XIZENG
- Applicant: HEADWAY TECHNOLOGIES INC , APPLIED SPINTRONICS INC , WANG PO-KANG , RONG YIN , YANG HSU KAI , SHI XIZENG
- Assignee: HEADWAY TECHNOLOGIES INC,APPLIED SPINTRONICS INC,WANG PO-KANG,RONG YIN,YANG HSU KAI,SHI XIZENG
- Current Assignee: HEADWAY TECHNOLOGIES INC,APPLIED SPINTRONICS INC,WANG PO-KANG,RONG YIN,YANG HSU KAI,SHI XIZENG
- Priority: US10397705 2005-04-12
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The word line segment select transistor (15) of a segmented word line array (11, 12) is placed on the word line current source side (14). This eliminates many undesirable effects effects currently associated with segmented word line MRAM arrays (18).
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