Invention Application
- Patent Title: SILICON CARBIDE DEVICE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 硅碳化硅器件及其制造方法
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Application No.: PCT/US2006/009256Application Date: 2006-03-15
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Publication No.: WO2006124107A1Publication Date: 2006-11-23
- Inventor: RYU, Sei-Hyung , JENNY, Jason R. , DAS, Mrinal K. , HOBGOOD, Hudson McDonald , AGARWAL, Anant K. , PALMOUR, John W.
- Applicant: CREE, INC. , RYU, Sei-Hyung , JENNY, Jason R. , DAS, Mrinal K. , HOBGOOD, Hudson McDonald , AGARWAL, Anant K. , PALMOUR, John W.
- Applicant Address: 4600 Silicon Drive, Durham, North Carolina 27703 US
- Assignee: CREE, INC.,RYU, Sei-Hyung,JENNY, Jason R.,DAS, Mrinal K.,HOBGOOD, Hudson McDonald,AGARWAL, Anant K.,PALMOUR, John W.
- Current Assignee: CREE, INC.,RYU, Sei-Hyung,JENNY, Jason R.,DAS, Mrinal K.,HOBGOOD, Hudson McDonald,AGARWAL, Anant K.,PALMOUR, John W.
- Current Assignee Address: 4600 Silicon Drive, Durham, North Carolina 27703 US
- Agency: MYERS BIGEL SIBLEY & SAJOVEC, P.A.
- Priority: US11/131,509 20050518
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/06
Abstract:
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
Information query
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