Novel ruthenium precursors having melting points no more than about 50°C are described herein. The disclosed ruthenium precursors may be liquids at 25°C, which enables their use without addition of a solvent and also eliminating a source of impurities. Pure ruthenium films or ruthenium containing films depending on the co-reactant used with the precursors may be obtained without detectable incubation time. Besides CVD, an ALD regime may be obtained for pure ruthenium deposition as well as for deposition of other ruthenium containing films (SrRuO 3 , RuO 2 for example).