Invention Application
WO2008082518A3 METHODS AND APPARATUSES FOR CONTROLLING GAS FLOW CONDUCTANCE IN A CAPACITIVELY-COUPLED PLASMA PROCESSING CHAMBER
审中-公开
用于控制电容耦合等离子体加工室中的气体流动的方法和装置
- Patent Title: METHODS AND APPARATUSES FOR CONTROLLING GAS FLOW CONDUCTANCE IN A CAPACITIVELY-COUPLED PLASMA PROCESSING CHAMBER
- Patent Title (中): 用于控制电容耦合等离子体加工室中的气体流动的方法和装置
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Application No.: PCT/US2007025831Application Date: 2007-12-19
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Publication No.: WO2008082518A3Publication Date: 2008-08-21
- Inventor: DHINDSA RAJINDER , ANTOLIK JERREL K , STEVENOT SCOTT
- Applicant: LAM RES CORP , DHINDSA RAJINDER , ANTOLIK JERREL K , STEVENOT SCOTT
- Assignee: LAM RES CORP,DHINDSA RAJINDER,ANTOLIK JERREL K,STEVENOT SCOTT
- Current Assignee: LAM RES CORP,DHINDSA RAJINDER,ANTOLIK JERREL K,STEVENOT SCOTT
- Priority: US64167006 2006-12-20
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H05H1/46
Abstract:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
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