BEVEL ETCHER WITH GAP CONTROL

Invention Application

WO2008091668A1 BEVEL ETCHER WITH GAP CONTROL 审中-公开

Title translation: BEVELER与GAP控制

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Patent Title: BEVEL ETCHER WITH GAP CONTROL
Patent Title (中): BEVELER与GAP控制
Application No.: PCT/US2008/000940

Application Date: 2008-01-24
Publication No.: WO2008091668A1

Publication Date: 2008-07-31
Inventor: BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KUTHI, Andras , KIM, Yunsang , KENNEDY, William S.
Applicant: LAM RESEARCH CORPORATION , BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KUTHI, Andras , KIM, Yunsang , KENNEDY, William S.
Applicant Address: 4650 Cushing Parkway Fremont, California 94538-6470 US
Assignee: LAM RESEARCH CORPORATION,BAILEY, Andrew, D., III,SCHOEPP, Alan M.,SEXTON, Gregory,KUTHI, Andras,KIM, Yunsang,KENNEDY, William S.
Current Assignee: LAM RESEARCH CORPORATION,BAILEY, Andrew, D., III,SCHOEPP, Alan M.,SEXTON, Gregory,KUTHI, Andras,KIM, Yunsang,KENNEDY, William S.
Current Assignee Address: 4650 Cushing Parkway Fremont, California 94538-6470 US
Agency: SKIFF, Peter, K.
Priority: US11/698,191 20070126
Main IPC: H01L21/3065
IPC: H01L21/3065

Abstract:

A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Abstract(Chinese):

一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀