发明申请
- 专利标题: HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN
- 专利标题(中): 正常使用开关的半桥电路及防止意外流过的方法
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申请号: PCT/US2008/064339申请日: 2008-05-21
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公开(公告)号: WO2008147801A2公开(公告)日: 2008-12-04
- 发明人: MAZZOLA, Michael, S. , KELLEY, Robin, L.
- 申请人: SEMISOUTH LABORATORIES, INC. , MAZZOLA, Michael, S. , KELLEY, Robin, L.
- 申请人地址: 201 Rerearch Blvd. Starkville, MS 39759 US
- 专利权人: SEMISOUTH LABORATORIES, INC.,MAZZOLA, Michael, S.,KELLEY, Robin, L.
- 当前专利权人: SEMISOUTH LABORATORIES, INC.,MAZZOLA, Michael, S.,KELLEY, Robin, L.
- 当前专利权人地址: 201 Rerearch Blvd. Starkville, MS 39759 US
- 代理机构: RAIMUND, Christopher, W.
- 优先权: US11/802,388 20070522
- 主分类号: H02M3/00
- IPC分类号: H02M3/00 ; H03K17/94
摘要:
A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.