Invention Application
WO2009014846A1 RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS
审中-公开
RF选择用于气体输送到等离子体处理装置中的RF驱动电极
- Patent Title: RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS
- Patent Title (中): RF选择用于气体输送到等离子体处理装置中的RF驱动电极
-
Application No.: PCT/US2008/068148Application Date: 2008-06-25
-
Publication No.: WO2009014846A1Publication Date: 2009-01-29
- Inventor: KUDELA, Jozef , SORENSEN, Carl A. , WHITE, John M.
- Applicant: APPLIED MATERIALS, INC. , KUDELA, Jozef , SORENSEN, Carl A. , WHITE, John M.
- Applicant Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Assignee: APPLIED MATERIALS, INC.,KUDELA, Jozef,SORENSEN, Carl A.,WHITE, John M.
- Current Assignee: APPLIED MATERIALS, INC.,KUDELA, Jozef,SORENSEN, Carl A.,WHITE, John M.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Agency: PATTERSON, B. Todd et al.
- Priority: US60/951,028 20070720
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05B31/26
Abstract:
In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
Information query