Invention Application
WO2009105347A2 PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH
审中-公开
用于形成图案化硬掩膜（RFP）的过程序列，而不需要光刻或干蚀刻
- Patent Title: PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH
- Patent Title (中): 用于形成图案化硬掩膜（RFP）的过程序列，而不需要光刻或干蚀刻
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Application No.: PCT/US2009/033250Application Date: 2009-02-05
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Publication No.: WO2009105347A2Publication Date: 2009-08-27
- Inventor: NEMANI, Srinivas, D. , VENKATARAMAN, Shankar , YIEH, Ellie, Y.
- Applicant: APPLIED MATERIALS, INC. , NEMANI, Srinivas, D. , VENKATARAMAN, Shankar , YIEH, Ellie, Y.
- Applicant Address: P.O. Box 450A Santa Clara, CA 95052 US
- Assignee: APPLIED MATERIALS, INC.,NEMANI, Srinivas, D.,VENKATARAMAN, Shankar,YIEH, Ellie, Y.
- Current Assignee: APPLIED MATERIALS, INC.,NEMANI, Srinivas, D.,VENKATARAMAN, Shankar,YIEH, Ellie, Y.
- Current Assignee Address: P.O. Box 450A Santa Clara, CA 95052 US
- Agency: SANDERS, Jason et al.
- Priority: US12/034,000 20080220
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/00
Abstract:
Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.
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