Embodiments of the present disclosure provide for the use and creation of materials based on natural cellulose f ihres, synthetic fibres, or mixed fibres as physical Support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-ef f ect transistors with non-volatile memory by using organic or inorganic active semi-conductors (1) for the manufacture of the Channel regions that is deposited on the fibres of the paper material (2)as well as metals or passive semiconductors for the manufacture of drain and source (5), allowing the interconnestion of fiber, in addition to the gate electrode (3) existing on the other side of the paper, respectively,p or n type, in monolithic or hybrid f orms.