Invention Application
- Patent Title: PHASE MEMORIZATION FOR LOW LEAKAGE DIELECTRIC FILMS
- Patent Title (中): 低漏电介质膜的相位记忆
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Application No.: PCT/US2009046897Application Date: 2009-06-10
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Publication No.: WO2009158193A3Publication Date: 2010-03-25
- Inventor: METZ MATTHEW , DEWEY GILBERT
- Applicant: INTEL CORP , METZ MATTHEW , DEWEY GILBERT
- Assignee: INTEL CORP,METZ MATTHEW,DEWEY GILBERT
- Current Assignee: INTEL CORP,METZ MATTHEW,DEWEY GILBERT
- Priority: US21532208 2008-06-25
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/31
Abstract:
Embodiments of a phase-stable amorphous high-? dielectric layer in a device and methods for forming the phase-stable amorphous high-? dielectric layer in a device are generally described herein. Other embodiments may be described and claimed.
Information query
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