Invention Application
- Patent Title: RELAXATION OF STRAINED LAYERS
- Patent Title (中): 松弛应变层
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Application No.: PCT/EP2009005694Application Date: 2009-08-06
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Publication No.: WO2010015401A3Publication Date: 2010-05-14
- Inventor: LETERTRE FABRICE , MAZURE CARLOS , KRAMES MICHAEL R , MCLAURIN MELVIN B , GARDNER NATHAN F
- Applicant: SOITEC SILICON ON INSULATOR , LETERTRE FABRICE , MAZURE CARLOS , KRAMES MICHAEL R , MCLAURIN MELVIN B , GARDNER NATHAN F
- Assignee: SOITEC SILICON ON INSULATOR,LETERTRE FABRICE,MAZURE CARLOS,KRAMES MICHAEL R,MCLAURIN MELVIN B,GARDNER NATHAN F
- Current Assignee: SOITEC SILICON ON INSULATOR,LETERTRE FABRICE,MAZURE CARLOS,KRAMES MICHAEL R,MCLAURIN MELVIN B,GARDNER NATHAN F
- Priority: EP08290757 2008-08-06; EP09290577 2009-07-21
- Main IPC: H01L21/324
- IPC: H01L21/324 ; B01J3/00 ; B01J3/06 ; H01L21/20 ; H01L33/00 ; H01L33/32
Abstract:
The present invention relates to a method for relaxing a strained material layer, comprising depositing a first low-viscosity layer comprising a first compliant material on the strained material layer, depositing a second low-viscosity layer comprising a second compliant material on the strained material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that reflow of the first and the second low-viscosity layers is caused thereby at least partly relaxing the strained material layer.
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