The present invention relates to a seed chuck for a single crystal silicon ingot growing apparatus. The seed chuck of the present invention is arranged in the single crystal silicon ingot growing apparatus based on the Czochralski process to hold a seed for growing single crystal silicon ingots. Said seed chuck comprises a seed chuck body having an upper portion with a rope joint part coupled with an ascending or descending rope, and a lower portion with a seed holding portion for accommodating and holding the seed. The seed chuck body has a hole for inserting a cooling pipe which has a vacuumed interior filled with a predetermined amount of refrigerant, and both ends of which are sealed. The cooling pipe is fitted into the insertion hole. The present invention employs a seed chuck with a cooling means to lower the temperature in a seed neck area during a body growing process and increase tensile strength. Whereby, large diameter single crystal silicon ingots can be safely grown.