Invention Application
- Patent Title: SINGLE CRYSTAL GROWING APPARATUS
- Patent Title (中): 单晶生长装置
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Application No.: PCT/KR2009/006830Application Date: 2009-11-20
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Publication No.: WO2010058980A2Publication Date: 2010-05-27
- Inventor: LEE, Sang Hun , CHOI, ll Soo , OH, Hyun Jung , JEONG, Seung , MOON, Ji Hun , KIM, Do Yeon
- Applicant: SILTRON INC. , LEE, Sang Hun , CHOI, ll Soo , OH, Hyun Jung , JEONG, Seung , MOON, Ji Hun , KIM, Do Yeon
- Applicant Address: 274, Imsu-dong Gumi, Gyongsangbuk-do 730-350 KR
- Assignee: SILTRON INC.,LEE, Sang Hun,CHOI, ll Soo,OH, Hyun Jung,JEONG, Seung,MOON, Ji Hun,KIM, Do Yeon
- Current Assignee: SILTRON INC.,LEE, Sang Hun,CHOI, ll Soo,OH, Hyun Jung,JEONG, Seung,MOON, Ji Hun,KIM, Do Yeon
- Current Assignee Address: 274, Imsu-dong Gumi, Gyongsangbuk-do 730-350 KR
- Agency: SEO, Kyo Jun
- Priority: KR10-2008-0115533 20081120
- Main IPC: C30B15/14
- IPC: C30B15/14 ; C30B15/30
Abstract:
Embodiments provide a single crystal growing apparatus. The single crystal growing apparatus may include a chamber, a crucible, a heater, and heat supplying means. The crucible may be provided in the chamber to hold silicon melt. The heater may be provided in the chamber to heat the crucible. The heat supplying means may supply heat to a crystal at a necking portion during single crystal growth.
Information query
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