The present invention relates to a thermoelectric nanowire which is manufactured by laminating an oxide layer and a thermoelectric material, which have different coefficients of thermal expansion, on a substrate, and enabling a single-crystal thermoelectric nanowire to be grown from the thermoelectric material using the compressive stress caused by the difference in thermal expansion coefficients. The present invention also relates to a method for manufacturing the thermoelectric nanowire. The method for manufacturing the thermoelectric nanowire comprises the steps of: providing a substrate on which an oxide layer is formed; forming a plurality of nanoparticles consisting of Al, Ag, Fe, or oxides thereof on the oxide layer; forming a thermoelectric thin film having thermoelectric characteristics on the oxide layer such that the thermoelectric thin film contains the plurality of nanoparticles formed on the oxide layer; performing a heat treatment on the substrate on which the thermoelectric thin film is formed, to enable the thermoelectric nanowire containing the plurality of nanoparticles to grow; and cooling the substrate at room temperature after the heat treatment process.