Invention Application
WO2010112782A3 ELECTRONIC STRUCTURE INCLUDING AN EPITAXIAL LAYER ON SINTERED SILICON
审中-公开
电子结构包括烧结硅片上的外延层
- Patent Title: ELECTRONIC STRUCTURE INCLUDING AN EPITAXIAL LAYER ON SINTERED SILICON
- Patent Title (中): 电子结构包括烧结硅片上的外延层
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Application No.: PCT/FR2010050628Application Date: 2010-04-01
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Publication No.: WO2010112782A3Publication Date: 2011-05-19
- Inventor: STRABONI ALAIN
- Applicant: TILE S , STRABONI ALAIN
- Assignee: TILE S,STRABONI ALAIN
- Current Assignee: TILE S,STRABONI ALAIN
- Priority: FR0952110 2009-04-02
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
The invention relates to a method and an electronic structure (35) including a substrate (26, 28), produced by sintering silicon powders, and at least one epitaxial layer (32). The invention also relates to photovoltaic cells and can be used in other fields, such as the fields of electronics, microelectronics or optoelectronics.
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