Invention Application
- Patent Title: METHOD FOR CONTACTING A SEMICONDUCTOR SUBSTRATE
- Patent Title (中): 方法用于接触半导体衬底
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Application No.: PCT/EP2010002364Application Date: 2010-04-17
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Publication No.: WO2010127764A3Publication Date: 2011-04-21
- Inventor: KOEHLER JUERGEN , ROEDER TOBIAS , GRABITZ PETER , WERNER JUERGEN
- Applicant: UNIV STUTTGART , KOEHLER JUERGEN , ROEDER TOBIAS , GRABITZ PETER , WERNER JUERGEN
- Assignee: UNIV STUTTGART,KOEHLER JUERGEN,ROEDER TOBIAS,GRABITZ PETER,WERNER JUERGEN
- Current Assignee: UNIV STUTTGART,KOEHLER JUERGEN,ROEDER TOBIAS,GRABITZ PETER,WERNER JUERGEN
- Priority: DE102009020774 2009-05-05
- Main IPC: H01L31/0224
- IPC: H01L31/0224
Abstract:
The invention relates to a method for contacting a semiconductor substrate (10), especially for contacting solar cells, a metal seed structure (26) being produced by a LIFT process on the surface to be contacted and the seed structure (26) being then reinforced. The seed structure is produced on the substrate surface through a cover layer (12) present on the surface to be contacted.
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