METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL

Invention Application

WO2011021160A3 METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL 审中-公开

Title translation: 测量晶片偏置电位的方法和装置

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Patent Title: METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL
Patent Title (中): 测量晶片偏置电位的方法和装置
Application No.: PCT/IB2010053735

Application Date: 2010-08-18
Publication No.: WO2011021160A3

Publication Date: 2011-08-11
Inventor: MAKHRATCHEV KONSTANTIN , VALCORE JOHN
Applicant: LAM RES CORP , LAM RES AG , MAKHRATCHEV KONSTANTIN , VALCORE JOHN
Assignee: LAM RES CORP,LAM RES AG,MAKHRATCHEV KONSTANTIN,VALCORE JOHN
Current Assignee: LAM RES CORP,LAM RES AG,MAKHRATCHEV KONSTANTIN,VALCORE JOHN
Priority: US54529309 2009-08-21
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/205 ; H01L21/66

METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL

Abstract:

A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

Abstract(Chinese):

一种用于具有等离子体形成体积和热边缘环的晶片处理室中的装置。热边缘环具有第一表面和第二表面。第一表面与等离子体形成体积接触。第二表面不与等离子体形成体积接触。该装置包括可操作以接触热边缘环的第二表面的检测器。检测器可以检测热边缘环的参数并且可以基于检测到的参数提供检测到的信号。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀