Invention Application
WO2011078483A3 FINE GAP-FILL POLYMERS, FINE GAP-FILLING COMPOSITIONS COMPRISING SAME, AND METHOD FOR MAKING INTEGRATED CIRCUIT SEMICONDUCTOR DEVICES USING SAME
审中-公开
细间隙填充聚合物，包含该间隙填充聚合物的细间隙填充组合物以及使用相同方法制造集成电路半导体器件的方法
- Patent Title: FINE GAP-FILL POLYMERS, FINE GAP-FILLING COMPOSITIONS COMPRISING SAME, AND METHOD FOR MAKING INTEGRATED CIRCUIT SEMICONDUCTOR DEVICES USING SAME
- Patent Title (中): 细间隙填充聚合物，包含该间隙填充聚合物的细间隙填充组合物以及使用相同方法制造集成电路半导体器件的方法
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Application No.: PCT/KR2010008193Application Date: 2010-11-19
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Publication No.: WO2011078483A3Publication Date: 2011-11-10
- Inventor: KOH SANG-RAN , KIM SANG-KYUN , CHO HYEON-MO , WOO CHANG-SOO , KIM MI-YOUNG , YUN HUI-CHAN , LEE WOO-JIN , KIM JONG-SEOB
- Applicant: CHEIL IND INC , KOH SANG-RAN , KIM SANG-KYUN , CHO HYEON-MO , WOO CHANG-SOO , KIM MI-YOUNG , YUN HUI-CHAN , LEE WOO-JIN , KIM JONG-SEOB
- Assignee: CHEIL IND INC,KOH SANG-RAN,KIM SANG-KYUN,CHO HYEON-MO,WOO CHANG-SOO,KIM MI-YOUNG,YUN HUI-CHAN,LEE WOO-JIN,KIM JONG-SEOB
- Current Assignee: CHEIL IND INC,KOH SANG-RAN,KIM SANG-KYUN,CHO HYEON-MO,WOO CHANG-SOO,KIM MI-YOUNG,YUN HUI-CHAN,LEE WOO-JIN,KIM JONG-SEOB
- Priority: KR20090131165 2009-12-24
- Main IPC: C08G77/04
- IPC: C08G77/04 ; C08L83/04 ; H01L21/469 ; H01L21/76
Abstract:
The present invention relates to fine gap-fill polymers and fine gap-filling compositions including same, and includes an organosilane polymer system which has the compound represented by Formula 1 as a substituent at its terminus. [Formula 1] HOOC-(CH2)l-R1 2Si-O-SiR1'2-(CH2)l-COOH, wherein R1, R1', and l of Formula 1 are defined and described in the description. Accordingly. the present invention provides a method for manufacturing integrated circuit semiconductor devices using the fine gap-filling compositions which have excellent gap-filling ability and good storage stability characteristics.
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