Invention Application
WO2011081323A3 COMPOSITION FOR THE BOTTOM LAYER OF A PHOTORESIST, AND METHOD USING SAME TO MANUFACTURE SEMICONDUCTOR DEVICE
审中-公开
用于光电二极管底层的组合物及使用其制造半导体器件的方法
- Patent Title: COMPOSITION FOR THE BOTTOM LAYER OF A PHOTORESIST, AND METHOD USING SAME TO MANUFACTURE SEMICONDUCTOR DEVICE
- Patent Title (中): 用于光电二极管底层的组合物及使用其制造半导体器件的方法
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Application No.: PCT/KR2010008859Application Date: 2010-12-10
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Publication No.: WO2011081323A3Publication Date: 2011-10-27
- Inventor: KIM MI-YOUNG , KIM SANG-KYUN , CHO HYEON-MO , WOO CHANG-SOO , KOH SANG-RAN , YUN HUI-CHAN , LEE WOO-JIN , KIM JONG-SEOB
- Applicant: CHEIL IND INC , KIM MI-YOUNG , KIM SANG-KYUN , CHO HYEON-MO , WOO CHANG-SOO , KOH SANG-RAN , YUN HUI-CHAN , LEE WOO-JIN , KIM JONG-SEOB
- Assignee: CHEIL IND INC,KIM MI-YOUNG,KIM SANG-KYUN,CHO HYEON-MO,WOO CHANG-SOO,KOH SANG-RAN,YUN HUI-CHAN,LEE WOO-JIN,KIM JONG-SEOB
- Current Assignee: CHEIL IND INC,KIM MI-YOUNG,KIM SANG-KYUN,CHO HYEON-MO,WOO CHANG-SOO,KOH SANG-RAN,YUN HUI-CHAN,LEE WOO-JIN,KIM JONG-SEOB
- Priority: KR20090136178 2009-12-31
- Main IPC: G03F7/11
- IPC: G03F7/11
Abstract:
According to one embodiment of the present invention, a composition for the bottom layer of a photoresist comprises: (A) a polysiloxane resin represented by chemical formula 1 below; and (B) a solvent. According to chemical formula 1: {(SiO1.5-Y-SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f, the bottom layer of a photoresist can have good storability and etch resistance, can have easily controllable physical surface properties, and can enable a photoresist pattern to be stably formed.
Information query
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