Disclosed is a method of programming a phase change memory (100) comprising a plurality of memory cells (10), each memory cell comprising a control terminal connected to a word line (30), and a current terminal connected to a bit line (20), comprising applying a first set pulse (Vb) having a shape including a decaying trailing edge (54) to one of the bit line (20) and the word line (30) of a memory cell (10) for changing its phase change material from an amorphous phase to a crystalline phase; applying a second set pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse (Ids) through the memory cell exhibits the decaying trailing edge (52), said decaying trailing edge ensuring the crystallization of the phase change material; applying a first reset pulse (Vb) having said shape to one of the bit line (20) and the word line (30) of a memory cell for changing its phase change material from the crystalline phase to the amorphous phase; and applying a second reset pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse (lds) through the memory cell exhibits the trailing edge of the second reset pulse. A corresponding phase change memory (100) is also disclosed.