发明申请
- 专利标题： LDMOS WITH NO REVERSE RECOVERY
- 专利标题（中）： LDMOS没有反向恢复
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申请号： PCT/US2011030001申请日： 2011-03-25
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公开(公告)号： WO2011126770A2公开(公告)日： 2011-10-13
- 发明人: ZUNIGA MARCO A
- 申请人： VOLTERRA SEMICONDUCTOR CORP , ZUNIGA MARCO A
- 专利权人： VOLTERRA SEMICONDUCTOR CORP,ZUNIGA MARCO A
- 当前专利权人： VOLTERRA SEMICONDUCTOR CORP,ZUNIGA MARCO A
- 优先权： US75056810 2010-03-30
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A transistor includes a source region including a first impurity region implanted into a substrate, a drain region including a second impurity region implanted into the substrate, and a gate including an oxide layer formed over the substrate and a conductive material formed over the oxide layer, the oxide layer comprising a first side and a second side, the first side formed over a portion of the first impurity region and the second side formed over a portion of the second impurity region, the first side having a thickness of less than about 100A, and the second side having a thickness equal to or greater than 125A.
IPC分类:
