Invention Application
- Patent Title: IMPROVED CHEMISTRIES FOR THE TEXTURING OF SILICON SUBSTRATES
- Patent Title (中): 改进的硅基质的化学化学
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Application No.: PCT/US2011/033839Application Date: 2011-04-26
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Publication No.: WO2011146206A1Publication Date: 2011-11-24
- Inventor: DOVE, Curtis , SINGH, Baljit , BAUER, Greg , HU, Jackson , BALOOCH, Mehdi
- Applicant: ASIA UNION ELECTRONIC CHEMICAL CORPORATION , DOVE, Curtis , SINGH, Baljit , BAUER, Greg , HU, Jackson , BALOOCH, Mehdi
- Applicant Address: No. 31, Chien-Yeh Road Ta-Liao Hsian 831 Kaohsiung County TW
- Assignee: ASIA UNION ELECTRONIC CHEMICAL CORPORATION,DOVE, Curtis,SINGH, Baljit,BAUER, Greg,HU, Jackson,BALOOCH, Mehdi
- Current Assignee: ASIA UNION ELECTRONIC CHEMICAL CORPORATION,DOVE, Curtis,SINGH, Baljit,BAUER, Greg,HU, Jackson,BALOOCH, Mehdi
- Current Assignee Address: No. 31, Chien-Yeh Road Ta-Liao Hsian 831 Kaohsiung County TW
- Agency: HEY, David, A.
- Priority: US61/345,704 20100518; US61/345,699 20100518
- Main IPC: C09K13/02
- IPC: C09K13/02 ; C09K13/00
Abstract:
Improved wet chemical solutions for texturing of silicon substrates, particularly for use as solar cells or photovoltaic devices are described. The solutions of the present invention provide more consistent and uniform texturing over the entire life of the solution, resulting in fewer discarded wafers, increased reliability and yield and lower costs. The etching solutions are OH - containing solutions, e.g. KOH, NaOH or TMAH, optionally mixed with IPA, having an additive that provides Si0 2 containing ions.
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