Invention Application
- Patent Title: CONDUCTIVE SIDEWALL FOR MICROBUMPS
- Patent Title (中): MICROBUMPS的导电小屋
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Application No.: PCT/US2011043987Application Date: 2011-07-14
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Publication No.: WO2012009520A3Publication Date: 2012-06-21
- Inventor: CHANDRASEKARAN ARVIND , GU SHIQUN , HAU-RIEGE CHRISTINE S
- Applicant: QUALCOMM INC , CHANDRASEKARAN ARVIND , GU SHIQUN , HAU-RIEGE CHRISTINE S
- Assignee: QUALCOMM INC,CHANDRASEKARAN ARVIND,GU SHIQUN,HAU-RIEGE CHRISTINE S
- Current Assignee: QUALCOMM INC,CHANDRASEKARAN ARVIND,GU SHIQUN,HAU-RIEGE CHRISTINE S
- Priority: US83771710 2010-07-16
- Main IPC: H01L21/60
- IPC: H01L21/60
Abstract:
Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper or nickel shell around the solder. The copper shell (220, 408) of one microbump contacts the copper shell (234) of a second microbump to enclose the solder (222) of the microbump connection. The copper shell (220 & 234) allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate (202, 230). Increased connection densities between two dies (202,230)or between a die and a packaging substrate are therefore possible.
Public/Granted literature
- WO2012009520A2 CONDUCTIVE SIDEWALL FOR MICROBUMPS Public/Granted day:2012-01-19
Information query
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