Invention Application
WO2012009612A3 METHOD OF PLASMA PREPARATION OF METALLIC CONTACTS TO ENHANCE MECHANICAL AND ELECTRICAL INTEGRITY OF SUBSEQUENT INTERCONNECT BONDS
审中-公开
金属接触等离子体的制备方法,以提高后续互连点的机械和电气完整性
- Patent Title: METHOD OF PLASMA PREPARATION OF METALLIC CONTACTS TO ENHANCE MECHANICAL AND ELECTRICAL INTEGRITY OF SUBSEQUENT INTERCONNECT BONDS
- Patent Title (中): 金属接触等离子体的制备方法,以提高后续互连点的机械和电气完整性
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Application No.: PCT/US2011044137Application Date: 2011-07-15
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Publication No.: WO2012009612A3Publication Date: 2012-04-19
- Inventor: SCHULTE ERIC FRANK
- Applicant: ONTOS EQUIPMENT SYSTEMS INC , SCHULTE ERIC FRANK
- Assignee: ONTOS EQUIPMENT SYSTEMS INC,SCHULTE ERIC FRANK
- Current Assignee: ONTOS EQUIPMENT SYSTEMS INC,SCHULTE ERIC FRANK
- Priority: US83775110 2010-07-16
- Main IPC: B23K1/20
- IPC: B23K1/20 ; B23K31/02
Abstract:
A method of removing oxidation from certain metallic contact surfaces utilizing a combination of relatively simple and inexpensive off-the-shelf equipment and specific chemistry. The method being a very rapid dry process which does not require a vacuum or containment chamber, or toxic gasses/chemicals, and does not damage sensitive electronic circuits or components. Additionally, the process creates a passivation layer on the surface of the metallic contact which inhibits further oxidation while allowing rapid and complete bonding, even many hours after surface treatment, without having to remove the passivation layer. The process utilizes a room-ambient plasma applicator with hydrogen, nitrogen, and inert gasses.
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