Invention Application
WO2012010662A3 PROCESS FOR DIRECT BONDING TWO ELEMENTS COMPRISING COPPER PORTIONS AND DIELECTRIC MATERIALS
审中-公开
直接结合包含铜部件和电介质材料的两个元件的工艺
- Patent Title: PROCESS FOR DIRECT BONDING TWO ELEMENTS COMPRISING COPPER PORTIONS AND DIELECTRIC MATERIALS
- Patent Title (中): 直接结合包含铜部件和电介质材料的两个元件的工艺
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Application No.: PCT/EP2011062540Application Date: 2011-07-21
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Publication No.: WO2012010662A3Publication Date: 2012-05-24
- Inventor: DI CIOCCIO LEA , GUEGUEN PIERRIC
- Applicant: COMMISSARIAT ENERGIE ATOMIQUE , DI CIOCCIO LEA , GUEGUEN PIERRIC
- Assignee: COMMISSARIAT ENERGIE ATOMIQUE,DI CIOCCIO LEA,GUEGUEN PIERRIC
- Current Assignee: COMMISSARIAT ENERGIE ATOMIQUE,DI CIOCCIO LEA,GUEGUEN PIERRIC
- Priority: FR1055936 2010-07-21
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L21/98 ; H01L23/485
Abstract:
Process for direct bonding a first (I) and a second (II) element, each element being provided with a surface comprising copper portions (6, 106) separated by a dielectric material (4, 104), said process comprising: A) a step of polishing said surfaces so that the surfaces to be joined can be direct bonded; B) a step of selectively forming a diffusion barrier (10, 110) on the copper portions (6, 106) of the first and second elements, the surface of the second diffusion barrier of the first and second elements being flush with said surface to within less than 5 nanometres; and C) a step of bringing the two surfaces into contact with each other so that the copper portions (6, 106) of one surface at least partially cover the copper portions (106, 6) of the other surface, and so that the surfaces are direct bonded.
Information query
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