Invention Application
- Patent Title: PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS
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Application No.: PCT/US2011/001270Application Date: 2011-07-18
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Publication No.: WO2012018368A9Publication Date: 2012-02-09
- Inventor: RICCI, Anthony , SAURABH, Ullal , MARTINEZ, Larry
- Applicant: LAM RESEARCH CORPORATION , RICCI, Anthony , SAURABH, Ullal , MARTINEZ, Larry
- Applicant Address: Lam Research Corporation 4650 Cushing Parkway Freemont, California 94538-6470 US
- Assignee: LAM RESEARCH CORPORATION,RICCI, Anthony,SAURABH, Ullal,MARTINEZ, Larry
- Current Assignee: LAM RESEARCH CORPORATION,RICCI, Anthony,SAURABH, Ullal,MARTINEZ, Larry
- Current Assignee Address: Lam Research Corporation 4650 Cushing Parkway Freemont, California 94538-6470 US
- Agency: SKIFF, Peter, K.
- Priority: US12/844,527 20100727
- Main IPC: H05H1/24
- IPC: H05H1/24 ; H01L21/205 ; H01L21/3065
Abstract:
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
Information query
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