Invention Application
- Patent Title: CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
- Patent Title (中): CdZnO或SnZnO缓冲层太阳能电池
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Application No.: PCT/US2011052725Application Date: 2011-09-22
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Publication No.: WO2012040440A3Publication Date: 2012-08-02
- Inventor: LEE CHUNGHO , ZHAO ZHIBO , BULLER BENYAMIN , SHAO RUI
- Applicant: FIRST SOLAR INC , LEE CHUNGHO , ZHAO ZHIBO , BULLER BENYAMIN , SHAO RUI
- Assignee: FIRST SOLAR INC,LEE CHUNGHO,ZHAO ZHIBO,BULLER BENYAMIN,SHAO RUI
- Current Assignee: FIRST SOLAR INC,LEE CHUNGHO,ZHAO ZHIBO,BULLER BENYAMIN,SHAO RUI
- Priority: US38539810 2010-09-22
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/073
Abstract:
A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
Information query
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