Invention Application
- Patent Title: METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILMS
- Patent Title (中): 制造高介电常数膜的方法
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Application No.: PCT/US2012032902Application Date: 2012-04-10
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Publication No.: WO2012145196A3Publication Date: 2013-01-03
- Inventor: KIM HYUNGJUN , KIM WOO-HEE , KIM MIN-KYU , HUNG STEVEN , NOORI ATIF , THOMPSON DAVID , ANTHIS JEFFREY W
- Applicant: APPLIED MATERIALS INC , KIM HYUNGJUN , KIM WOO-HEE , KIM MIN-KYU , HUNG STEVEN , NOORI ATIF , THOMPSON DAVID , ANTHIS JEFFREY W
- Assignee: APPLIED MATERIALS INC,KIM HYUNGJUN,KIM WOO-HEE,KIM MIN-KYU,HUNG STEVEN,NOORI ATIF,THOMPSON DAVID,ANTHIS JEFFREY W
- Current Assignee: APPLIED MATERIALS INC,KIM HYUNGJUN,KIM WOO-HEE,KIM MIN-KYU,HUNG STEVEN,NOORI ATIF,THOMPSON DAVID,ANTHIS JEFFREY W
- Priority: US201161477422 2011-04-20
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/8238
Abstract:
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
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