Invention Application
- Patent Title: DMOS TRANSISTOR WITH CAVITY BELOW DRIFT REGION
- Patent Title (中): 具有下面DRIFT区域的DMOS晶体管
-
Application No.: PCT/US2012035249Application Date: 2012-04-26
-
Publication No.: WO2012149184A3Publication Date: 2013-01-10
- Inventor: FRENCH WILLIAM , VASHCHENKO VLADISLAV , FOOTE RICHARD WENDELL , SADOVNIKOV ALEXEI , BHOLA PUNIT , HOPPER PETER J
- Applicant: TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , FRENCH WILLIAM , VASHCHENKO VLADISLAV , FOOTE RICHARD WENDELL , SADOVNIKOV ALEXEI , BHOLA PUNIT , HOPPER PETER J
- Assignee: TEXAS INSTRUMENTS INC,TEXAS INSTRUMENTS JAPAN,FRENCH WILLIAM,VASHCHENKO VLADISLAV,FOOTE RICHARD WENDELL,SADOVNIKOV ALEXEI,BHOLA PUNIT,HOPPER PETER J
- Current Assignee: TEXAS INSTRUMENTS INC,TEXAS INSTRUMENTS JAPAN,FRENCH WILLIAM,VASHCHENKO VLADISLAV,FOOTE RICHARD WENDELL,SADOVNIKOV ALEXEI,BHOLA PUNIT,HOPPER PETER J
- Priority: US201113094645 2011-04-26
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A lateral DMOS transistor (300) formed on a silicon-on-insulator (SOI) structure (102) has a higher breakdown voltage that results from a cavity (310) that is formed in the bulk region (104) of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer (106) of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.
Information query
IPC分类:
