The present invention relates to a silicon breast implant which minimizes stress concentration, and to a method for manufacturing same. The silicon breast implant minimizes stress concentration applied thereto after being inserted into the human body so as to maximize the resistance of same to fatigue-induced rupture, thereby improving the durability of the implant. Further, the breast implant may include an elegant patch-adhesion portion having a thin thickness so as to provide superior overall tactile feel and improve the appearance of the product. Further, the breast implant has a silicon shell defining an outer wall thereof and the patch adhesion portion for closing, from the outside, a hole formed in a bottom surface of the silicon shell so that the patch adhesion portion is increased in strength so as to maximize adhesion durability, safety of use, and effectiveness. The silicon shell has an overall uniform thickness, and the patch adhesion portion comprises a patch hole through which a patch adheres to a lower end of the silicon shell using an adhesive material. The patch adhesion portion in which the patch adheres to the patch hole has the same thickness as the silicon shell. Further, the breast implant may have physical properties equal or similar to those of the silicon shell so as to minimize stress concentration.