Invention Application
- Patent Title: METHOD FOR ETCHING ATOMIC LAYER OF GRAPHINE
- Patent Title (中): 蚀刻图形原子层的方法
-
Application No.: PCT/KR2012005747Application Date: 2012-07-19
-
Publication No.: WO2013015559A3Publication Date: 2013-03-21
- Inventor: YEOM GEUN YOUNG , LIM WOONG SUN , MIN KYUNG SEOK , KIM YI YEON
- Applicant: UNIV SUNGKYUNKWAN RES & BUS , YEOM GEUN YOUNG , LIM WOONG SUN , MIN KYUNG SEOK , KIM YI YEON
- Assignee: UNIV SUNGKYUNKWAN RES & BUS,YEOM GEUN YOUNG,LIM WOONG SUN,MIN KYUNG SEOK,KIM YI YEON
- Current Assignee: UNIV SUNGKYUNKWAN RES & BUS,YEOM GEUN YOUNG,LIM WOONG SUN,MIN KYUNG SEOK,KIM YI YEON
- Priority: KR20110072843 2011-07-22; KR20120074309 2012-07-09
- Main IPC: C01B31/02
- IPC: C01B31/02 ; B01J19/08 ; H01L21/3065
Abstract:
The present invention relates to a method for etching an atomic layer of graphine, comprising: adsorbing a reactive radical to a surface of graphine; and irradiating an energy source to the graphine to which the reactive radical is adsorbed.
Information query
