Invention Application
- Patent Title: HIGH-VOLTAGE LEVEL-SHIFTER
- Patent Title (中): 高电压电平变换器
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Application No.: PCT/US2011/066794Application Date: 2011-12-22
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Publication No.: WO2013095500A1Publication Date: 2013-06-27
- Inventor: SCHROM, Gerhard , VUNNUM, Ravi Sankar
- Applicant: INTEL CORPORATION , SCHROM, Gerhard , VUNNUM, Ravi Sankar
- Applicant Address: 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95052 US
- Assignee: INTEL CORPORATION,SCHROM, Gerhard,VUNNUM, Ravi Sankar
- Current Assignee: INTEL CORPORATION,SCHROM, Gerhard,VUNNUM, Ravi Sankar
- Current Assignee Address: 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95052 US
- Agency: MUGHAL, Usman A. et al.
- Main IPC: H03K19/0185
- IPC: H03K19/0185
Abstract:
Described herein is a high-voltage level-shifter (HVLS) that can be used for both NMOS and PMOS bridges, exhibits a higher voltage tolerance for over-clocking than traditional level-shifters, has reduced crowbar current in its input driver, and no contention in its output driver. The HVLS comprises an input driver including a first signal conditioning unit, the input driver operating on a first power supply level and for conditioning an input signal as a first signal in the first signal conditioning unit; and a circuit to receive the first signal and to provide a second signal based at least in part on the first signal, the second signal being level-shifted from the first power supply level to a second power supply level, wherein the second power supply level is higher than the first power supply level.
Information query
IPC分类: