Invention Application
- Patent Title: LOW COST INTERPOSER COMPRISING AN OXIDATION LAYER
- Patent Title (中): 包含氧化层的低成本间隙器
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Application No.: PCT/US2014/033329Application Date: 2014-04-08
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Publication No.: WO2014168946A1Publication Date: 2014-10-16
- Inventor: GU, Shiqun , RAY, Urmi , CHEN, Roawen , HENDERSON, Brian Matthew , RADOJCIC, Ratibor , NOWAK, Matthew , YU, Nicholas
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Agency: LOZA, Julio
- Priority: US13/861,086 20130411
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48
Abstract:
Some implementations provide an interposer that includes a substrate, a via in the substrate, and an oxidation layer. The via includes a metal material. The oxidation layer is between the via and the substrate. In some implementations, the substrate is a silicon substrate. In some implementations, the oxidation layer is a thermal oxide formed by exposing the substrate to heat. In some implementations, the oxidation layer is configured to provide electrical insulation between the via and the substrate. In some implementations, the interposer also includes an insulation layer. In some implementations, the insulation layer is a polymer layer. In some implementations, the interposer also includes at least one interconnect on the surface of the interposer. The at least one interconnect is positioned on the surface of the interposer such that the oxidation layer is between the interconnect and the substrate.
Information query
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