Invention Application
WO2015023287A1 METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH
审中-公开
涂层用于激光切割和等离子体蚀刻的水溶性掩模的方法
- Patent Title: METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH
- Patent Title (中): 涂层用于激光切割和等离子体蚀刻的水溶性掩模的方法
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Application No.: PCT/US2013/055213Application Date: 2013-08-15
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Publication No.: WO2015023287A1Publication Date: 2015-02-19
- Inventor: LEI, Wei-Sheng , EATON, Brad , IYER, Aparna , EGAN, Todd , YALAMANCHILI, Madhava Rao , KUMAR, Ajay
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Agency: BERNADICOU, Michael A. et al.
- Main IPC: H01L21/301
- IPC: H01L21/301 ; H01L21/3065
Abstract:
Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
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