Invention Application
- Patent Title: NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
- Patent Title (中): 新型三胺衍生物，其制备方法和使用其的含硅薄膜
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Application No.: PCT/KR2015/000168Application Date: 2015-01-08
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Publication No.: WO2015105337A1Publication Date: 2015-07-16
- Inventor: JANG, Se Jin , LEE, Sang-Do , KIM, Jong Hyun , KIM, Sung Gi , KIM, Do Yeon , YANG, Byeong-il , SEOK, Jang Hyeon , LEE, Sang Ick , KIM, Myong Woon
- Applicant: DNF CO.,LTD.
- Applicant Address: 142, Daehwa-ro 132beon-gil Daedeok-gu Daejeon 306-802 KR
- Assignee: DNF CO.,LTD.
- Current Assignee: DNF CO.,LTD.
- Current Assignee Address: 142, Daehwa-ro 132beon-gil Daedeok-gu Daejeon 306-802 KR
- Agency: PLUS INTERNATIONAL IP LAW FIRM
- Priority: KR10-2014-0002538 20140108; KR10-2014-0193165 20141230
- Main IPC: C07F7/10
- IPC: C07F7/10 ; C23C16/18
Abstract:
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.
Information query
