Invention Application
WO2015112802A1 SYSTEM AND METHOD FOR SHIFTING CRITICAL DIMENSIONS OF PATTERNED FILMS
审中-公开
用于移动图案关键尺寸的系统和方法
- Patent Title: SYSTEM AND METHOD FOR SHIFTING CRITICAL DIMENSIONS OF PATTERNED FILMS
- Patent Title (中): 用于移动图案关键尺寸的系统和方法
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Application No.: PCT/US2015/012592Application Date: 2015-01-23
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Publication No.: WO2015112802A1Publication Date: 2015-07-30
- Inventor: DEVILLIERS, Anton J. , FULFORD, Daniel
- Applicant: TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
- Applicant Address: Akasaka Biz Tower 3-1 Akasaka 5-chome Minato-ku, Tokyo 107-6325 JP
- Assignee: TOKYO ELECTRON LIMITED,TOKYO ELECTRON U.S. HOLDINGS, INC.
- Current Assignee: TOKYO ELECTRON LIMITED,TOKYO ELECTRON U.S. HOLDINGS, INC.
- Current Assignee Address: Akasaka Biz Tower 3-1 Akasaka 5-chome Minato-ku, Tokyo 107-6325 JP
- Agency: MATHER, Joshua D.
- Priority: US61/932,005 20140127
- Main IPC: H01L21/027
- IPC: H01L21/027
Abstract:
Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes.
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