Invention Application
WO2015171314A1 ERROR CORRECTING CODE TECHNIQUES FOR A MEMORY HAVING A THREE-DIMENSIONAL MEMORY CONFIGURATION
审中-公开
具有三维存储器配置的存储器的错误校正代码技术
- Patent Title: ERROR CORRECTING CODE TECHNIQUES FOR A MEMORY HAVING A THREE-DIMENSIONAL MEMORY CONFIGURATION
- Patent Title (中): 具有三维存储器配置的存储器的错误校正代码技术
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Application No.: PCT/US2015/027075Application Date: 2015-04-22
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Publication No.: WO2015171314A1Publication Date: 2015-11-12
- Inventor: D'ABREU, Manuel Antonio , HU, Xinde
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Agency: TOLER, Jeffrey G.
- Priority: US14/273,005 20140508
- Main IPC: G06F11/10
- IPC: G06F11/10
Abstract:
A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes encoding first data to be stored at a first physical page. The first physical page is disposed within the memory at a first distance from a substrate of the memory, and the first data is encoded using a first encoding technique. The method further includes encoding second data to be stored at a second physical page. The second physical page is disposed within the memory at a second distance from the substrate that is greater than the first distance. The second data is encoded using a second encoding technique that is different than the first encoding technique.
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