HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS

Invention Application

WO2016061468A3 HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS 审中-公开

Title translation: 高速沉积混合氧化物阻挡膜

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Patent Title: HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS
Patent Title (中): 高速沉积混合氧化物阻挡膜
Application No.: PCT/US2015055961

Application Date: 2015-10-16
Publication No.: WO2016061468A3

Publication Date: 2017-05-26
Inventor: DICKEY ERIC R , DANFORTH BRYAN LARSON
Applicant: LOTUS APPLIED TECH LLC
Assignee: LOTUS APPLIED TECH LLC
Current Assignee: LOTUS APPLIED TECH LLC
Priority: US201462065487 2014-10-17
Main IPC: H01L21/205
IPC: H01L21/205

HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS

Abstract:

The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2•day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.

Abstract(Chinese):

本公开涉及金属氧化物阻挡膜，特别涉及用于沉积这种阻挡膜的高速方法。公开了能够产生具有低于0.1g /（m2·天）的水蒸气透过率（WVTR）的阻挡膜的方法。公开了用于在原子层沉积（ALD）反应器内连续传输衬底并且执行有限数量的ALD循环以实现期望的WVTR的方法。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长
H01L21/205	.....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积